@Article{KawataFKHBRORA:2022:PrToCr,
               author = "Kawata, Bianca Akemi and Fornari, Celso Israel and Kagerer, P. and 
                         Heßd{\"o}rfer, J. and Bentmann, H. and Reinert, F. and Okazaki, 
                         A. K. and Rappl, Paulo Henrique de Oliveira and Abramof, Eduardo",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and 
                         {Universit{\"a}t W{\"u}rzburg} and {Universit{\"a}t 
                         W{\"u}rzburg} and {Universit{\"a}t W{\"u}rzburg} and 
                         {Universit{\"a}t W{\"u}rzburg} and {Universit{\"a}t 
                         W{\"u}rzburg} and {Centro Nacional de Pesquisa em Energia e 
                         Materiais} and {Instituto Nacional de Pesquisas Espaciais (INPE)} 
                         and {Instituto Nacional de Pesquisas Espaciais (INPE)}",
                title = "Properties of topological crystalline insulator Pb0.5Sn0.5Te 
                         epitaxial films doped with bismuth",
              journal = "Journal of Applied Physics",
                 year = "2022",
               volume = "131",
                pages = "e085302",
             abstract = "We report here on the properties of topological crystalline 
                         insulator Pb0.5Sn0.5Te epitaxial films doped with bismuth at 
                         levels from 0% (undoped) to 0.15%. The undoped film exhibits a 
                         p-type character due to metal vacancies. As the doping level 
                         rises, the hole concentration reduces. At a level of 0.06%, the 
                         electrical character inverts to n-type and the electron density 
                         continues to increase for rising doping level up to 0.15%. This 
                         result demonstrates an effective extrinsic n-type doping of 
                         Pb0.5Sn0.5Te crystal with bismuth due to substitutional Bi atoms 
                         in metal sites. High-resolution x-ray diffraction and reciprocal 
                         space mapping show that fully relaxed high-quality films are 
                         obtained. A pristine (111) film surface is revealed after removal 
                         of the Te cover layer using a method combining Ar+ sputtering and 
                         thermal desorption. Angle-resolved photoemission spectroscopy 
                         (ARPES) data acquired at 30 K near the \Γ point of the 
                         undoped film surface show a parabolic-like dispersion of the bulk 
                         valence band close to the Fermi level. Now, the ARPES data for a 
                         sample doped with 0.1% of Bi reveal that the chemical potential is 
                         shifted by 40 meV upwards in the direction of the conduction band. 
                         The ARPES results also indicate that there might be a discrepancy 
                         between surface and bulk chemical potential in the doped sample. 
                         This divergence suggests that Te atoms diffuse into the surface 
                         during the thermal process to desorb the protective layer, 
                         inverting the surface to p-type.",
                  doi = "10.1063/5.0080329",
                  url = "http://dx.doi.org/10.1063/5.0080329",
                 issn = "0021-8979",
             language = "en",
           targetfile = "kawata_properties.pdf",
        urlaccessdate = "03 maio 2024"
}